STB9NK50ZT4
STMicroelectronicsSwitzerland

STB9NK50ZT4

Not For New DesignsSingle FETs, MOSFETsD2PAK

MOSFET N-CH 500V 7.2A D2PAK

See alternativesAsk AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage500 V
Continuous drain current7.2 A
On-resistance850 mΩMax · 3.6A
Gate threshold voltage4.5 VMax · 100μA
Power
Current - Continuous Drain (Id) @ 25°C7.2A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)110W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Other
Base Product NumberSTB9
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds910 pF @ 25 V
MfrSTMicroelectronics
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs850mOhm @ 3.6A, 10V
SeriesSuperMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 100µA

Documents

DatasheetDatasheet · 365.6 KB · 2026-09-21DatasheetDatasheet · 365.6 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
Open document center