STD16N50M2

在产单 FET,MOSFETTO-252

MOSFET N-CH 500V 13A TO252

沟道N 沟道
耐压500 V
连续漏极电流13 A
导通电阻280 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流13 A
导通电阻280 mΩ最大 · 6.5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)110W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)
其他
Base Product NumberSTD16
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs280mOhm @ 6.5A, 10V
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料