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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current16 A
On-resistance70 mΩMax · 8A
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)40W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Other
Base Product NumberSTD16
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 15 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs70mOhm @ 8A, 10V
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

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