STMicroelectronicsSwitzerland

STD2LN60K3

ActiveSingle FETs, MOSFETsTO-252-3

MOSFET N CH 600V 2A DPAK

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current2 A
On-resistance4.5 ΩMax · 1A
Gate threshold voltage4.5 VMax · 50μA
Power
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)45W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Other
Base Product NumberSTD2LN60
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds235 pF @ 50 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs4.5Ohm @ 1A, 10V
SeriesSuperMESH3™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

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DatasheetDatasheet · 1.0 MB · 2026-09-22Application NoteApplication Note · 2.7 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22Application NoteApplication Note · 776.6 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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