STMicroelectronicsSwitzerland

STD36P4LLF6

ActiveSingle FETs, MOSFETsTO-252-3

MOSFET P-CH 40V 36A DPAK

See alternativesAsk AI FAEDatasheet PDF

All alternatives

View full report

Technical parameters

Key specs

ChannelP-channel
Drain-source voltage40 V
Continuous drain current36 A
On-resistance20.5 mΩMax · 18A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)60W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Other
Base Product NumberSTD36
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2850 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs20.5mOhm @ 18A, 10V
SeriesSTripFET™ F6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Documents

DatasheetDatasheet · 411.6 KB · 2026-09-29DatasheetDatasheet · 411.6 KB · 2026-09-21Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
Open document center