STD5N52K3

在产单 FET,MOSFETTO-252-3

MOSFET N-CH 525V 4.4A DPAK

沟道N 沟道
耐压525 V
连续漏极电流4.4 A
导通电阻1.5 Ω

全部替代型号

查看完整报告

技术参数

沟道N 沟道
耐压525 V
连续漏极电流4.4 A
导通电阻1.5 Ω最大 · 2.2A
阈值电压4.5 V最大 · 50μA
电源
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Drain to Source Voltage (Vdss)525 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)70W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
其他
Base Product NumberSTD5N52
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds545 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.2A, 10V
SeriesSuperMESH3™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

技术资料