All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage250 V
Continuous drain current8 A
On-resistance420 mΩMax · 8A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)72W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK
Other
Base Product NumberSTD8NF25
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs420mOhm @ 8A, 10V
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Documents