STMicroelectronicsSwitzerland

STF10N80K5

ActiveSingle FETs, MOSFETsTO-220FP

MOSFET N-CH 800V 9A TO220FP

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage800 V
Continuous drain current9 A
On-resistance600 mΩMax · 4.5A
Gate threshold voltage5 VMax · 100μA
Power
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)30W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP
Other
Base Product NumberSTF10
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds635 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs600mOhm @ 4.5A, 10V
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 100µA

Documents

DatasheetDatasheet · 837.2 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 1.9 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 784.8 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 756.4 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 215.1 KB · 2026-09-22
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