STMicroelectronicsШвейцария
N-channel 800 V, 0.35 Ohm typ.,
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Тип каналаN-channel
Напряжение сток-исток800 V
Постоянный ток стока11 A
Сопротивление в открытом состоянии400 mΩМакс. · 5.5A
Пороговое напряжение5 VМакс. · 250μA
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 35W (Tc) |
| Условия эксплуатации и корпус | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FP |
| Другое | |
| Base Product Number | STF11 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
| Mfr | STMicroelectronics |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| Series | MDmesh™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
Документы
DatasheetDatasheet · 904.8 KB · 2026-09-21DatasheetDatasheet · 904.8 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 1.9 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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