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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current70 A
On-resistance3.5 mΩMax · 35A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)33W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP
Other
Base Product NumberSTF140
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs3.5mOhm @ 35A, 10V
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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