STMicroelectronicsSwitzerland

STF19NF20

ActiveSingle FETs, MOSFETsTO-220FP

MOSFET N-CH 200V 15A TO220FP

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage200 V
Continuous drain current15 A
On-resistance160 mΩMax · 7.5A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)25W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP
Other
Base Product NumberSTF19
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs160mOhm @ 7.5A, 10V
SeriesMESH OVERLAY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Documents

DatasheetDatasheet · 805.2 KB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.2 MB · 2026-09-22MarketingMarketing · 1.2 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22MarketingMarketing · 764.7 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 743.7 KB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22
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