STMicroelectronicsSwitzerland
MOSFET N-CH 950V 17.5A TO220FP
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage950 V
Continuous drain current17.5 A
On-resistance330 mΩMax · 9A
Gate threshold voltage5 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 40W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FP |
| Other | |
| Base Product Number | STF20 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Mfr | STMicroelectronics |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 9A, 10V |
| Series | SuperMESH5™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
Documents
DatasheetDatasheet · 1.1 MB · 2026-09-21DatasheetDatasheet · 1.1 MB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 1.9 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 756.4 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 215.1 KB · 2026-09-22
Open document center