STMicroelectronicsSwitzerland
MOSFET N-CH 40V 120A H2PAK-2
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current120 A
On-resistance2.4 mΩMax · 60A
Gate threshold voltage4.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Qualification | AEC-Q101 |
| Supplier Device Package | H2Pak-2 |
| Other | |
| Base Product Number | STH175 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7735 pF @ 20 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 60A, 10V |
| Series | STripFET™ F6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
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