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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage75 V
Continuous drain current20 A
On-resistance7 mΩMax · 10A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)5.2W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CasePolarPak®
Supplier Device PackagePolarPak®
Other
Base Product NumberSTK20
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3150 pF @ 25 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs7mOhm @ 10A, 10V
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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