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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage80 V
Continuous drain current100 A
On-resistance6.1 mΩMax · 10A
Gate threshold voltage4.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)4.8W (Ta), 120W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6)
Other
Base Product NumberSTL100
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3435 pF @ 40 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs6.1mOhm @ 10A, 10V
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

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