STL10N60M2

停产单 FET,MOSFET

MOSFET N-CH 600V 5.5A PWRFLAT56

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沟道N 沟道
耐压600 V
连续漏极电流5.5 A
导通电阻660 mΩ

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技术参数

沟道N 沟道
耐压600 V
连续漏极电流5.5 A
导通电阻660 mΩ最大 · 2.5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)48W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6) HV
其他
Base Product NumberSTL10
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 100 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs660mOhm @ 2.5A, 10V
SeriesMDmesh™ II Plus
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料

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