STL11N65M2

STL11N65M2

停产单 FET,MOSFET

MOSFET N-CH 650V POWERFLAT 5X5 H

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沟道N 沟道
耐压650 V
连续漏极电流7 A
导通电阻670 mΩ

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技术参数

沟道N 沟道
耐压650 V
连续漏极电流7 A
导通电阻670 mΩ最大 · 3.5A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)85W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TA)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case-
Supplier Device Package-
其他
Base Product NumberSTL11
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds410 pF @ 100 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs670mOhm @ 3.5A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

器件图片

技术资料

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