STL12N10F7

STL12N10F7

在产单 FET,MOSFET

MOSFET N-CH 100V 44A POWERFLAT

沟道N 沟道
耐压100 V
连续漏极电流44 A
导通电阻13.3 mΩ

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技术参数

沟道N 沟道
耐压100 V
连续漏极电流44 A
导通电阻13.3 mΩ最大 · 6A
阈值电压4.5 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)52W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (3.3x3.3)
其他
Base Product NumberSTL12
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1820 pF @ 50 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs13.3mOhm @ 6A, 10V
SeriesSTripFET™ F7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

器件图片

技术资料