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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current12 A
On-resistance9 mΩMax · 6A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2W (Ta), 50W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (3.3x3.3)
Other
Base Product NumberSTL12
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 25 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs9mOhm @ 6A, 10V
SeriesSTripFET™ V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±22V
Vgs(th) (Max) @ Id2.5V @ 250µA

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