STL26N60DM6
STMicroelectronicsSwitzerland

STL26N60DM6

ActiveSingle FETs, MOSFETs

MOSFET N-CH 600V 15A PWRFLAT HV

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current15 A
On-resistance215 mΩMax · 7.5A
Gate threshold voltage4.75 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)110W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (8x8) HV
Other
Base Product NumberSTL26
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs215mOhm @ 7.5A, 10V
SeriesMDmesh™ DM6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4.75V @ 250µA

Documents

DatasheetDatasheet · 351.9 KB · 2026-09-22Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 2.3 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 622.2 KB · 2026-09-22MarketingMarketing · 602.4 KB · 2026-09-22MarketingMarketing · 471.8 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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