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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage400 V
Continuous drain current430 mA
On-resistance5.5 ΩMax · 220mA
Gate threshold voltage2 VMax · 50μA
Power
Current - Continuous Drain (Id) @ 25°C430mA (Tc)
Drain to Source Voltage (Vdss)400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)2.5W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFLAT™ (5x5)
Other
Base Product NumberSTL3NK40
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs5.5Ohm @ 220mA, 10V
SeriesSuperMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 50µA

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