STMicroelectronicsSwitzerland
MOSFET P-CH 20V 4A POWERFLAT
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current4 A
On-resistance100 mΩMax · 2A
Gate threshold voltage1 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Power Dissipation (Max) | 2.4W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 6-PowerWDFN |
| Supplier Device Package | PowerFlat™ (2x2) |
| Other | |
| Base Product Number | STL4 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| Series | DeepGATE™, STripFET™ VII |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
Documents
No documents are linked to this part yet.