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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current5 A
On-resistance1.05 ΩMax · 2A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)4W (Ta), 67W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFLAT™ (5x5)
Other
Base Product NumberSTL7
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds271 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs1.05Ohm @ 2A, 10V
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

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