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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current85 A
On-resistance5.7 mΩMax · 8.5A
Gate threshold voltage2 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)80W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6)
Other
Base Product NumberSTL85
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3400 pF @ 25 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs5.7mOhm @ 8.5A, 10V
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

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