STL8N10LF3
STMicroelectronicsSwitzerland

STL8N10LF3

ActiveSingle FETs, MOSFETs

MOSFET N CH 100V 20A PWRFLT5X6

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current20 A
On-resistance35 mΩMax · 4A
Gate threshold voltage3 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Power Dissipation (Max)4.3W (Ta), 70W (Tc)
Environment and package
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
QualificationAEC-Q101
Supplier Device PackagePowerFlat™ (5x6)
Other
Base Product NumberSTL8
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds970 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs35mOhm @ 4A, 10V
SeriesSTripFET™ III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Documents

DatasheetDatasheet · 949.5 KB · 2026-09-21DatasheetDatasheet · 949.5 KB · 2026-09-21Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.2 MB · 2026-09-22MarketingMarketing · 1.2 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 912.4 KB · 2026-09-22MarketingMarketing · 764.7 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 743.7 KB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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