All alternatives

View full report

Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current9 A
On-resistance15 mΩMax · 4.5A
Gate threshold voltage1 VMax · 250μA (Min)
Power
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (3.3x3.3)
Other
Base Product NumberSTL9
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2615 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs15mOhm @ 4.5A, 10V
SeriesSTripFET™ H6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Documents