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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current120 A
On-resistance3 mΩMax · 75A
Gate threshold voltage4 VMax · 1mA
Power
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)6.5V, 10V
Power Dissipation (Max)130W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-PowerWDFN
Supplier Device PackagePowerFlat™ (5x6) Dual Side
Other
Base Product NumberSTLD125
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5600 pF @ 10 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs3mOhm @ 75A, 10V
SeriesSTripFET™ F6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

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