STMicroelectronicsSwitzerland
MOSFET P-CH 20V 4.2A SOT223
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current4.2 A
On-resistance80 mΩMax · 2.1A
Gate threshold voltage450 mVMax · 250μA (Min)
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 2.5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Other | |
| Base Product Number | STN5P |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 412 pF @ 15 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.1A, 4.5V |
| Series | STripFET™ II |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |