STMicroelectronicsSwitzerland

STP100NF04

ActiveSingle FETs, MOSFETsTO-220

MOSFET N-CH 40V 120A TO220AB

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current120 A
On-resistance4.6 mΩMax · 50A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP100
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs4.6mOhm @ 50A, 10V
SeriesAutomotive, AEC-Q101, STripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Documents

DatasheetDatasheet · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.2 MB · 2026-09-22MarketingMarketing · 1.2 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22MarketingMarketing · 764.7 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 743.7 KB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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