STMicroelectronicsSwitzerland

STP150N10F7

ActiveSingle FETs, MOSFETsTO-220

MOSFET N-CH 100V 110A TO220

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage100 V
Continuous drain current110 A
On-resistance4.2 mΩMax · 55A
Gate threshold voltage4.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)250W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP150
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8115 pF @ 50 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs4.2mOhm @ 55A, 10V
SeriesDeepGATE™, STripFET™ VII
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Documents

DatasheetDatasheet · 824.6 KB · 2026-09-29Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.2 MB · 2026-09-22MarketingMarketing · 1.2 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1006.7 KB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22MarketingMarketing · 764.7 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 743.7 KB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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