STMicroelectronicsSwitzerland

STP200NF03

Not For New DesignsSingle FETs, MOSFETsTO-220

MOSFET N-CH 30V 120A TO220AB

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current120 A
On-resistance3.6 mΩMax · 60A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP200
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4950 pF @ 25 V
MfrSTMicroelectronics
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs3.6mOhm @ 60A, 10V
SeriesSTripFET™ III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Documents

DatasheetDatasheet · 442.8 KB · 2026-09-21DatasheetDatasheet · 442.8 KB · 2026-09-21Application NoteApplication Note · 4.8 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22Application NoteApplication Note · 139.2 KB · 2026-09-22
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