STMicroelectronicsSwitzerland

STP26N60M2

ActiveSingle FETs, MOSFETsTO-220

MOSFET N-CHANNEL 600V 20A TO220

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current20 A
Power
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)169W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP26
FET Feature-
FET TypeN-Channel
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs-
SeriesMDmesh™ M2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id-

Documents

DatasheetDatasheet · 504.9 KB · 2026-09-22Application NoteApplication Note · 2.7 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.4 MB · 2026-09-22Application NoteApplication Note · 1.4 MB · 2026-09-22Application NoteApplication Note · 1.3 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 652.8 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 145.6 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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