STMicroelectronicsSwitzerland

STP2NK100Z

ActiveSingle FETs, MOSFETsTO-220

MOSFET N-CH 1000V 1.85A TO220AB

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage1 kV
Continuous drain current1.85 A
On-resistance8.5 ΩMax · 900mA
Gate threshold voltage4.5 VMax · 50μA
Power
Current - Continuous Drain (Id) @ 25°C1.85A (Tc)
Drain to Source Voltage (Vdss)1000 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)70W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP2NK100
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds499 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs8.5Ohm @ 900mA, 10V
SeriesSuperMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

Documents

DatasheetDatasheet · 622.1 KB · 2026-09-21DatasheetDatasheet · 611.5 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 1.9 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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