STMicroelectronicsSwitzerland

STP30NF20

ActiveSingle FETs, MOSFETsTO-220

MOSFET N-CH 200V 30A TO220AB

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage200 V
Continuous drain current30 A
On-resistance75 mΩMax · 15A
Gate threshold voltage4 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)125W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP30
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1597 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs75mOhm @ 15A, 10V
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

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