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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current45 A
On-resistance18 mΩMax · 22.5A
Gate threshold voltage1 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)70W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP45N
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs18mOhm @ 22.5A, 10V
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id1V @ 250µA

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