STMicroelectronicsSwitzerland

STP55NF06L

ActiveSingle FETs, MOSFETsTO-220

MOSFET N-CH 60V 55A TO220AB

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current55 A
On-resistance18 mΩMax · 27.5A
Gate threshold voltage1.7 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V, 5V
Power Dissipation (Max)95W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP55
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs18mOhm @ 27.5A, 10V
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id1.7V @ 250µA

Documents

DatasheetDatasheet · 333.0 KB · 2026-09-29DatasheetDatasheet · 333.0 KB · 2026-09-21Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.2 MB · 2026-09-22MarketingMarketing · 1.2 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22MarketingMarketing · 764.7 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22MarketingMarketing · 743.7 KB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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