STMicroelectronicsSwitzerland

STP6N62K3

ActiveSingle FETs, MOSFETsTO-220

MOSFET N-CH 620V 5.5A TO220AB

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage620 V
Continuous drain current5.5 A
On-resistance1.2 ΩMax · 2.8A
Gate threshold voltage4.5 VMax · 50μA
Power
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drain to Source Voltage (Vdss)620 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)90W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
Other
Base Product NumberSTP6N62
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds875 pF @ 50 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.8A, 10V
SeriesSuperMESH3™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

Documents

DatasheetDatasheet · 1.0 MB · 2026-09-21DatasheetDatasheet · 591.7 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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