STP9NM50N

停产单 FET,MOSFETTO-220

MOSFET N-CH 500V 5A TO220AB

沟道N 沟道
耐压500 V
连续漏极电流5 A
导通电阻560 mΩ

全部替代型号

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流5 A
导通电阻560 mΩ最大 · 3.7A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)70W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220
其他
Base Product NumberSTP9N
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 50 V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs560mOhm @ 3.7A, 10V
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料