STR2P3LLH6
STMicroelectronicsSwitzerland

STR2P3LLH6

ActiveSingle FETs, MOSFETsSOT-23-3

MOSFET P-CH 30V 2A SOT-23

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current2 A
On-resistance56 mΩMax · 1A
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)350mW (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Other
Base Product NumberSTR2P3
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds639 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs56mOhm @ 1A, 10V
SeriesSTripFET™ H6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Documents

DatasheetDatasheet · 531.2 KB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22Application NoteApplication Note · 1.6 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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