STS10P3LLH6
STMicroelectronicsSwitzerland

STS10P3LLH6

ActiveSingle FETs, MOSFETs8-SOIC

MOSFET P-CH 30V 10A 8SO

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Technical parameters

Key specs

ChannelP-channel
Drain-source voltage30 V
Continuous drain current10 A
On-resistance12 mΩMax · 5A
Gate threshold voltage1 VMax · 250μA (Min)
Power
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.7W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberSTS10
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3350 pF @ 25 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs12mOhm @ 5A, 10V
SeriesSTripFET™ H6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Documents

DatasheetDatasheet · 281.7 KB · 2026-09-21DatasheetDatasheet · 281.7 KB · 2026-09-21Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 659.9 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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