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Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C500mA
Drain to Source Voltage (Vdss)450V
Power - Max1.3W
Environment and package
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC
Other
Base Product NumberSTS1D
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
MfrSTMicroelectronics
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.8Ohm @ 500mA, 10V
SeriesSuperMESH3™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 50µA

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