MOSFET N-CH 30V 100A 8SOIC
沟道N 沟道
耐压30 V
连续漏极电流100 A
导通电阻4.2 mΩ
全部替代型号
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沟道N 沟道
耐压30 V
连续漏极电流100 A
导通电阻4.2 mΩ最大 · 10A
阈值电压2.5 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3W (Ta), 70W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC-EP |
| 其他 | |
| Base Product Number | STSJ100N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 10A, 10V |
| Series | STripFET™ III |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |