MOSFET P-CH 20V 3A SOT-23-6
沟道P 沟道
耐压20 V
连续漏极电流3 A
导通电阻110 mΩ
全部替代型号
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沟道P 沟道
耐压20 V
连续漏极电流3 A
导通电阻110 mΩ最大 · 1.5A
阈值电压600 mV最大 · 250μA (Min)
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Power Dissipation (Max) | 1.6W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Supplier Device Package | SOT-23-6 |
| 其他 | |
| Base Product Number | STT4P |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V |
| Mfr | STMicroelectronics |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.5A, 4.5V |
| Series | STripFET™ II |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |