STMicroelectronicsSwitzerland

STTA2006PI

ObsoleteSingle Diodes

DIODE GEN PURP 600V 20A DOP3I

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Technical parameters

Key specs

Reverse voltage600 V
Average rectified current20 A
Forward voltage1.75 VMax · 20 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
Power
Current - Average Rectified (Io)20A
Current - Reverse Leakage @ Vr100 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.75 V @ 20 A
Environment and package
Mounting TypeThrough Hole
Operating Temperature - Junction150°C (Max)
PackageBulk
Package / CaseDOP3I-2 Insulated (Straight Leads)
Supplier Device PackageDOP3I
Other
Base Product NumberSTTA200
Capacitance @ Vr, F-
MfrSTMicroelectronics
Product StatusObsolete
Reverse Recovery Time (trr)60 ns
SeriesTURBOSWITCH™
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

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