STMicroelectronicsШвейцария
MOSFET N-CH 950V 4A IPAK
Все аналоги
Полный отчётТехнические параметры
Основные параметры
Тип каналаN-channel
Напряжение сток-исток950 V
Постоянный ток стока4 A
Сопротивление в открытом состоянии3.5 ΩМакс. · 2A
Пороговое напряжение5 VМакс. · 100μA
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 90W (Tc) |
| Условия эксплуатации и корпус | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | TO-251 (IPAK) |
| Другое | |
| Base Product Number | STU5N95 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
| Mfr | STMicroelectronics |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2A, 10V |
| Series | SuperMESH3™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
Документы
DatasheetDatasheet · 376.8 KB · 2026-09-22Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 1.9 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22
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