STULED623

在产单 FET,MOSFETTO-251

MOSFET N-CH 620V 3A IPAK

沟道N 沟道
耐压620 V
连续漏极电流3 A
导通电阻3.6 Ω

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技术参数

沟道N 沟道
耐压620 V
连续漏极电流3 A
导通电阻3.6 Ω最大 · 1.1A
阈值电压4.5 V最大 · 50μA
电源
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drain to Source Voltage (Vdss)620 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)45W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251 (IPAK)
其他
Base Product NumberSTULED623
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 50 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs3.6Ohm @ 1.1A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

技术资料