STMicroelectronicsSwitzerland

STW48N60DM2

ActiveSingle FETs, MOSFETsTO-247-3

N-channel 600 V, 0.065 Ohm typ.,

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage600 V
Continuous drain current40 A
On-resistance79 mΩMax · 20A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Other
Base Product NumberSTW48
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3250 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs79mOhm @ 20A, 10V
SeriesMDmesh™ DM2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Documents

DatasheetDatasheet · 225.6 KB · 2026-09-21Application NoteApplication Note · 2.7 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.4 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22MarketingMarketing · 1013.0 KB · 2026-09-22MarketingMarketing · 980.7 KB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22MarketingMarketing · 784.8 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 622.2 KB · 2026-09-22Application NoteApplication Note · 446.8 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 305.2 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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