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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage650 V
Continuous drain current28 A
On-resistance87 mΩMax · 19A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)300W (Tc)
Environment and package
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-247-3
QualificationAEC-Q101
Supplier Device PackageTO-247-3
Other
Base Product NumberSTW50
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs87mOhm @ 19A, 10V
SeriesMDmesh™ DM2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

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