STMicroelectronicsSwitzerland

STWA32N65DM6AG

ActiveSingle FETs, MOSFETsTO-247 Long Leads

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage650 V
Continuous drain current37 A
On-resistance97 mΩMax · 18.5A
Gate threshold voltage4.75 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)320W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-247-3
Supplier Device PackageTO-247 Long Leads
Other
Base Product NumberSTWA32
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2211 pF @ 100 V
MfrSTMicroelectronics
Product StatusActive
Rds On (Max) @ Id, Vgs97mOhm @ 18.5A, 10V
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4.75V @ 250µA

Documents

DatasheetDatasheet · 250.5 KB · 2026-09-22Application NoteApplication Note · 2.7 MB · 2026-09-22MarketingMarketing · 2.3 MB · 2026-09-22Application NoteApplication Note · 1.8 MB · 2026-09-22User ManualUser Manual · 1.5 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 896.9 KB · 2026-09-22Application NoteApplication Note · 880.0 KB · 2026-09-22MarketingMarketing · 791.7 KB · 2026-09-22MarketingMarketing · 787.0 KB · 2026-09-22Application NoteApplication Note · 772.3 KB · 2026-09-22MarketingMarketing · 764.5 KB · 2026-09-22Application NoteApplication Note · 657.7 KB · 2026-09-22Application NoteApplication Note · 622.2 KB · 2026-09-22MarketingMarketing · 602.4 KB · 2026-09-22MarketingMarketing · 471.8 KB · 2026-09-22Application NoteApplication Note · 347.0 KB · 2026-09-22MarketingMarketing · 203.5 KB · 2026-09-22MarketingMarketing · 109.3 KB · 2026-09-22
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