TIP101
Central Semiconductor CorpUnited States

TIP101

ObsoleteSingle Bipolar TransistorsTO-220-3

TRANS NPN DARL 80V 8A TO220-3

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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage80 V
Collector current8 AMax
DC current gain10003A
Power80 WMax
Power
Current - Collector Cutoff (Max)50µA
Current - Collector (Ic) (Max)8 A
Power - Max80 W
Voltage - Collector Emitter Breakdown (Max)80 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Frequency - Transition4MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other
MfrCentral Semiconductor Corp
Product StatusObsolete
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A

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DatasheetDatasheet · 307.8 KB · 2026-09-21DatasheetDatasheet · 216.0 KB · 2026-09-21Quality & ReliabilityQuality & Reliability · 2.1 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 1.2 MB · 2026-09-22Quality & ReliabilityQuality & Reliability · 731.1 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 273.3 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 235.6 KB · 2026-09-22EnvironmentalEnvironmental · 224.2 KB · 2026-09-22EnvironmentalEnvironmental · 105.0 KB · 2026-09-22PCN & ErrataPCN & Errata · 77.3 KB · 2026-09-22
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